Coulomb blockade in silicon based structures at temperatures up to 50 K
نویسندگان
چکیده
منابع مشابه
Observation of quantum effects and Coulomb blockade in silicon quantum-dot transistors at temperatures over 100 K
We report the fabrication and characterization of lithographically defined nanoscale silicon quantum-dot transistors that operate at temperatures over 100 K and a bias higher than 0.07 V. In the tunneling regime, these transistors show strong current oscillations due to quantum confinement and single-electron charging effects. In the propagating regime, a different kind of current modulation ha...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 1993
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.109972